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Localization of excitons in an indirect gap GaAs / AlAs superlattice.

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Call No.	QC176.8.E9 A54 1992
Author	Angell, James Frederick.
Title	Localization of excitons in an indirect gap GaAs / AlAs superlattice.
Date	1992
Description	vii, 89 leaves : ill. 28 cm
Format	application/pdf
Subject	Exciton theory. Electroluminescence. Temperature. Gallium arsenide semiconductors. Superlattices as materials.
Issuing Body	Dartmouth Dissertations are made available through the Dartmouth Digital Library.
Degree	Thesis (Ph.D.)--Dartmouth College.
Copyright	All rights reserved. No part of this book may be reproduced in any form by any electronic or mechanical means without permission in writing from the author.
DOI	http://dx.doi.org/10.1349/ddlp.1385

Title	Page 1
Full Text	Localization of Excitons in an Indirect Gap GaAs / AlAs Superlattice A Thesis submitted to the Faculty in partial fulfillment of the requirements for the degree of Doctor of Philosophy by James Frederick Angell DARTMOUTH COLLEGE Hanover, New Hampshire September 1992 Richard W. Bimie (Dean of Graduate Studies)

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